p-n Junction

Which of the following circuit diagram of p – n junction diode is (i) forward bias and in (ii) reverse bias:
    

The reverse current in a Zener diode starts increasing suddenly at a relatively low breakdown voltage of $5 \mathrm{V}$ or so. Is this statement true or false?

What is difference between normal diode and power diode?

Do diodes have resistance?

What is a normal diode?

How do you choose a diode rating?

What will be the decrease of barrier voltage with the rise in $10\mathrm{C}$ in temperature?

As the temperature to the $\mathrm{P}-\mathrm{N}$ junction increases the current.

Increases due to?

Which of the following $\mathrm{P}-\mathrm{N}$ junction characteristics are not dependent on temperature.

Which of the following parameters of $\mathrm{P}-\mathrm{N}$ junction diode increases with temperature.

The maximum width of the surface depletion region of a MOS capacitor with ${\mathrm{SIO}}_2-\mathrm{SI}$ junction and ${\mathrm{N}}_{\mathrm{A}}=\raisebox{1ex}{${10}^{17}$}\!\left/ \!\raisebox{-1ex}{${\mathrm{cm}}^3$}\right.$ is  _______ $\mathrm{\mu m}$. [ Take ${\mathrm{\epsilon }}_{\mathrm{s}}$ for silicon$=11.9$ and ${\mathrm{n}}_{\mathrm{i}}=\raisebox{1ex}{${10}^{10}$}\!\left/ \!\raisebox{-1ex}{${\mathrm{cm}}^3$}\right.$]

According to the tunneling phenomenon of tunnel diode which one of the following is true?

The graph of the electric field in the transition region of an abrupt $\mathrm{p}-\mathrm{n}$ junction is as given below

Let ${\mathrm{N}}_{\mathrm{a}}, {\mathrm{N}}_{\mathrm{d}}$ be doping concentration in $\mathrm{p}$ and $\mathrm{n}-$side of $\mathrm{P}-\mathrm{N}$ junction then 

Consider an abrupt $\mathrm{p}-\mathrm{n}$ junction act $\left(\mathrm{T}=300\mathrm{K}\right)$ shown in the figure. The depleting region width ${\mathrm{X}}_{\mathrm{n}}$ on the $\mathrm{n}-$side of the junction is $0.2\mathrm{\mu m}$ and the permittivity of silicon$\left({\mathrm{t}}_{\mathrm{si}}\right)$ is $1.044\times {10}^{-12} \raisebox{1ex}{$\mathrm{F}$}\!\left/ \!\raisebox{-1ex}{$\mathrm{cm}$}\right.$. At the junction, the approximate absolute value of the peak electric field $\left(\raisebox{1ex}{$\mathrm{KV}$}\!\left/ \!\raisebox{-1ex}{$\mathrm{cm}$}\right.\right)$ is

In a $\mathrm{p}-\mathrm{n}$ junction diode under reverse bias, the magnitude of electric field is maximum at 

The electric field profile in the deplection region of a $\mathrm{p}-\mathrm{n}$ junction in equilibrium is shown in the figure, which one of the following statements is NOT true?

Explain the importance of PIV(peak inverse voltage) rating of a diode.

Does the barrier potential of pn junction depend on temperature?
 

Why does the width of the depletion layer of a pn junction ?

Why is there an electric field in the depletion region?